ION IMPLANTATION || MODULE 4 || EC 465 || KTU MEMS || LECTURE 31

Hi all, today we are discussing about Ion Implantation Let's see what is Ion Implantation Ion Implantation involves forcing free atoms such as boron or phosphorus with charged particles or ions into a substrate, thereby achieving imbalance between the number of protons and electrons in resulting atomic structure. We have studied in detail about Ion Implantation in VLSI Design. In Ion Implantation, we add free atoms such as boron or phosphorus with charged particles or ions into a substrate, thereby achieving imbalance between the number of protons and electrons in resulting atomic structure. Ion Implantation involves forcing free atoms such as boron or phosphorus with charged particles or ions into a substrate, thereby achieving imbalance between the number of protons and electrons in resulting atomic structure. For this reason, the Ion Implantation procedure always involves the acceleration of ions in order to gain sufficient kinetic energy for implantation. Ions to be implanted are created in a ion source, which an ion beam is formed. Ions are extracted from the substance in gaseous state. The ion beam then led into a beam controller in which the size and direction of beam can be adjusted. The ions in the beam are then energized in the acceleration tube or accelerator, in which the final energy with which ions will impact the substrate is generated. The ion beam then led into a beam controller in which the size and direction of beam can be adjusted. A shield or mask is used for the Ion Implantation. The highly energized ions enter the substrate and collide with the electrons and nuclei of the substrate. The Ion Implantation does not require high temperature for the process. The main disadvantage of the Ion Implantation is that the doping distribution in the substrate is not uniform. The doping distribution in the substrate is not uniform. N of X is equal to Q by root 2 pi delta R p exponential of minus of X minus R p the whole square divided by 2 into delta R p square. The Ion Implantation does not require high temperature for the process.